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| SMD Type Complementary Power Transistors MJD41C(NPN) MJD42C(PNP) Transistors Features Lead Formed for Surface Mount Applications in Plastic Sleeves Monolithic Construction With Built?in Base ? Emitter Resistors Pb-Free Packages are Available 6.50 +0.2 5.30-0.2 +0.15 -0.15 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector current (pulse) Base current Total Device Dissipation FR-5 Board @TA = 25 Derate above 25 Total Device Dissipation Alumina Substrate @TA = 25 Derate above 25 Junction temperature Storage temperature Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol VCEO VCB VEB IC ICP IB PD Rating 100 100 5 6 10 2 20 0.16 1.75 0.014 150 -65 to +150 6.25 71.4 /W /W Unit V V V A A A W W/ W W/ PD Tj Tstg ReJC ReJA 3.80 www.kexin.com.cn 1 SMD Type MJD41C(NPN) MJD42C(PNP) Electrical Characteristics Ta = 25 Parameter Collector-emitter sustaining voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Current-gain-bandwidth product *2 Small-signal current gain *1 Pulse test: pulse width *2 fT= hfe ftest 300 is, duty cycle 2.0%. Symbol Testconditons Transistors Min 100 Typ Max Unit V VCEo(sus) IC = 30 mA, IB = 0 ICEO ICES IEBO hFE VCE = 60 V, IB = 0 VCE = 100 V,VEB = 0 VBE = 5V, IC = 0 IC = 0.3 A, VCE = 4 V IC = 3 A, VCE = 4 V VCE(sat) IC = 6 A, IB = 600 mA VBE(on) IC = 6 A, VCE = 4 V fT hfe IC = 500 mA,VCE = 10 V,ftest = 1 MHz IC = 0.5 A, VCE = 10 V, f = 1 kHz 50 10 0.5 30 15 75 1.5 2 3 20 iA iA mA V V MHz hFE Classification TYPE Marking MJD41C J41C MJD42C J42C 2 www.kexin.com.cn |
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